IR Expands Its Portfolio of Mid-Voltage Power MOSFETs in PQFN Package Utilizing Copper Clip Technology
Fri, 06/25/2010 - 9:16am
International Rectifier, IR® today announced the expansion of its portfolio of HEXFET power MOSFETs to offer a complete family of mid-voltage devices available in a 5 x 6 mm PQFN package with optimized copper clip and solder die.
The new power MOSFETs, featuring IR’s latest silicon technology to deliver benchmark performance are designed for switching applications including DC to DC converters for network and telecom equipment, AC-DC Switch Mode Power Supplies (SMPS), and motor drive switches.
Available in a wide range of voltages from 40V to 250V, the devices provide various levels of on-state resistance (RDS(on)) and gate charge (Qg) to offer customers optimized performance and cost for a given application.