SMT Power Amplifier Features High Efficiency and Low EVM
Fri, 04/02/2010 - 6:58am
Hittite Microwave Corporation announces the release of a new GaAs InGaP HBT MMIC power amplifier which is ideal for automotive, broadband, WiMAX and LTE/4G applications from 2.3 to 2.8 GHz. The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC power amplifier which is rated from 2.3 GHz to 2.8 GHz and provides up to 31 dB of gain. This high efficiency amplifier operates from a single +5 V supply, and achieves 28% power added efficiency (PAE) at +33 dBm of saturated output power. Three power control pins can be used to reduce the RF output power of the PA, or for full power down of the amplifier to conserve DC power. The integrated output power detector pin (VDET) is internally coupled and provides excellent measurement accuracy while requiring only a single external decoupling capacitor. With an OFDM output power of +25 dBm (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5%, making it appropriate for WiMAX and LTE/4G applications.