RF Power LDMOS Reduces Power Requirements
Tue, 03/31/2009 - 7:37am
Freescale Semiconductor introduces its next generation of laterally diffused metal oxide semiconductor (LDMOS) RF power transistors for reduced power consumption in cellular transmitters. This high-voltage (HV8) RF Power LDMOS technology meets the demands of high-data rate applications such as W-CDMA and WiMAX, as well as emerging standards such as LTE and multicarrier GSM. The portfolio of devices based on HV8 technology is optimized for operation in advanced power amplifier architectures which includes Doherty used in combination with digital pre-distortion (DPD). A primary benefit of this technology is the increase in operating efficiency that helps reduce total power consumption of a base station system, thereby reducing operating costs. In addition, HV8 has been optimized to withstand the operating environments of advanced system architectures.