GaN HEMT Microwave Transistor Supplies 120 W
Wed, 01/07/2009 - 11:05am
Cree’s CGH40120F GaN HEMT microwave transistor delivers a minimum saturated output power of 120 W at 28 V. The component performs in general-purpose military and industrial applications, such as electronic warfare, tactical communications, radar, instrumentation, and direct video broadcast applications. The performance of the device has been demonstrated in a number of amplifier applications, including a 1,200-MHz to 1,400-MHz instantaneous-bandwidth reference amplifier that offers >18-dB typical small-signal gain, 100-W typical CW output power, and typical power-added efficiencies of 75%. The unit comes in a flanged ceramic-metal package with a single unmatched GaN HEMT die.