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LDMOS RF Power Transistors Meet Commercial Aerospace Requirements

Thu, 12/18/2008 - 7:11am


Freescale Semiconductor introduces its MRF6V4300N high-performance laterally diffused metal oxide semiconductor (LDMOS) RF power transistor that is optimized for HF to UHF communications. This power transistor is suitable for a range of applications, including radar and air traffic management systems since it provides high gain and efficiency. The device delivers RF output power of 300 W CW from 10 to 600 MHz. At 450 MHz, it has a gain of 22 dB and 60 percent efficiency. Housed in an RoHS-compliant, cost-effective over-molded plastic package, the device has optimally tight mechanical tolerances and a low thermal resistance of 0.24°C/W, which enhances the management of heat dissipation and helps to reduce the heat sink size.

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