HV-HBT Transistors Provide RF Solution
Mon, 09/08/2008 - 6:45am
TriQuint Semiconductor releases two HV-HBT (high voltage-heterojunction bipolar transistor) devices that are efficient and highly linear. When paired with proprietary high power HBT devices, they provide a complete RF solution for 3G/4G high power amplifier (HPA) mobile infrastructure designs. These relatively low power HBT devices are suitable as pre-drivers and drivers. The HV-HBT devices integrate two stages into a single package, allowing designers to reduce the number of discrete amplifier components in a system. When used in a typical base station HPA design, a 25% cost reduction and a PCB area savings of 12 cm² can be achieved compared to designs using two separate discrete amplifier stages.