HJ FET Offers Low Noise Performance
Mon, 09/22/2008 - 12:45pm
For designers working in the X and Ku bands, California Eastern Laboratories introduces NEC’s NE3515S02 Hetero-Junction FET for use as a buffer amplifier in applications such as DBS LNBs and high dynamic range front ends. At 12 GHz and a supply voltage of 3 V, the FET delivers a P1dB of 14 dBm with 14 dB linear gain while maintaining a noise figure under 0.5 dB (typ). The FET is housed in an RoHS-compliant S02 hollow plastic surface-mount package with an overall footprint of 3.2 mm², and it features recessed leads for lower inductance and improved performance.