Power MOSFET Demonstrates High Efficiency
Mon, 08/25/2008 - 11:38am
Renesas Technology’s RJK0383DPA dual-type power MOSFET achieves an efficiency rating of 91.6% in a synchronous-rectification circuit converting a 12 V DC input to a 1.1 V DC output at 600 kHz switching frequencies. The 5.3 × 6.2 × 0.8 mm WPAK³-packageddevice integrates high-side and low-side power MOSFETS and a Schottky barrier diode in DC/DC converters for laptop PCs and communication devices. The MOSFET exhibits a drain-gate load (Qgd) of 1.5 nC at a VDD of 10 V and a typical on-resistance of 3.7 mΩ at 4.5 V.