GaN Power Transistor Addresses 2.5 and 3.5 GHz Markets
Thu, 05/08/2008 - 11:56am
Nitronex unveils its Model NPT1004 gallium nitride high electron mobility transistor (HEMT) that delivers 45 W at 28 V for high PAR (peak to average ratio) and pulsed applications. Designed using the proprietary SIGANTIC NRF1 process, the transistor combines a broadband DC to 4 GHz high power density GaN-on-Si HEMT with a thermally-enhanced plastic package to offer an optimized system for light thermal load power applications. It delivers 5W average power for 2.5 to 3.5 GHz WiMAX applications and 4.5 W for 3.3 to 3.5 GHz WiMAX applications. The transistor is packaged in a thermally enhanced PSOP package, and it is RoHS compliant.