BJTs Deliver Maximized Power Efficiency
Wed, 08/08/2007 - 11:57am
ON Semiconductor’s low Vce(sat) bipolar junction transistors (BJTs) portfolio now includes PNP and NPN devices that incorporate advanced silicon technology. These transistors deliver maximized power efficiency and longer battery life than traditional BJTs or planar MOSFETS. Suited for a variety of portable applications, the low Vce(sat) BJTs are available in a multiple package options, including WDFN, SOT-23, SOT-223, SOT-563, ChipFET and SC-88. The company’s new NSSxxx low Vce(sat) surface mount devices are specifically designed for use in low voltage switching applications where energy efficient control is vital. They feature ultra-low saturation voltage 45 millivolts (mV) at 1 amp and high current gain 300. Offering a high electrostatic discharge (ESD) tolerance of greater than 8,000 volts (V), these Low Vce(sat) BJTs are self-protecting against unexpected surges and damage. By providing superior electrical performance and low temperature coefficient, they improve power efficiency and ultimately, battery power conservation without the need for additional ESD protection circuits.