Monolithic Microwave Integrated Circuit Amplifier
Tue, 07/17/2007 - 9:05am
Mimix Broadband, Inc. introduces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage power amplifier featuring an on-chip temperature compensated output detector. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 17 to 24 GHz frequency bands and has a small signal gain of 18 dB with +27 dBm P1dB compression point. The XP1019-BD die is a good buffer or output transmit amplifier and is suitable for millimeter-wave point-to-point radio communications and military applications.