Ultra-low noise GaAs FET
NEC¹s ultra-low noise NE3514S02 Hetero-Junction GaAs FET is an suitable choice for DBS LNB modules or as a first stage LNA in a variety of receiver applications. At 20 GHz, it delivers a typical noise figure of just 0.75 dB with 10 dB gain, so it can significantly improve a system¹s sensitivity. The NE3514S02 is housed in NEC¹s newest hollow plastic surface-mount package. It has an overall footprint of just 3.2 × 3.2 mm and features recessed leads for lower inductance and improved performance.