ON Semiconductor’s low Vce(sat) bipolar junction transistors (BJTs) portfolio includes WDFN6, WDFN3, SOT-23, SOT-563 and ChipFET packages. These devices incorporate advanced silicon technology and provide better power efficiency and longer battery life than traditional BJTs or planar MOSFETS. The low Vce(sat) surface-mount devices are specifically designed for use in low voltage, high-speed switching applications where energy efficiency control is vital.
Improved Power Efficiency for Portable Applications
Wed, 11/15/2006 - 7:56am