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Plastic Packaging for High-power RF Transistors

Fri, 08/11/2006 - 10:53am

Freescale Semiconductor introduces 2 GHz high-power RF transistors housed in over-molded plastic packages that deliver performance comparable to air-cavity flange packages. The transistors are based on the company’s high-voltage, seventh-generation (HV7) RF Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology. Designated the MRF7S1912N, this device delivers a minimum of 120 W P1dB and 36 W average with typical performance anticipated to be 18 dB gain, 32% efficiency and – 37.5 dBc linearity at PAR=6.1 dB.


Freescale Semiconductor


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