Product Releases

Plastic Packaging for High-power RF Transistors

Fri, 08/11/2006 - 10:53am

Freescale Semiconductor introduces 2 GHz high-power RF transistors housed in over-molded plastic packages that deliver performance comparable to air-cavity flange packages. The transistors are based on the company’s high-voltage, seventh-generation (HV7) RF Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology. Designated the MRF7S1912N, this device delivers a minimum of 120 W P1dB and 36 W average with typical performance anticipated to be 18 dB gain, 32% efficiency and – 37.5 dBc linearity at PAR=6.1 dB.

Freescale Semiconductor


Share this Story

You may login with either your assigned username or your e-mail address.
The password field is case sensitive.