M/A-COM announces three additions to its existing line of packageless Surmount PIN diodes. The MA4SPS421, MA4SPS422 series devices and MA4PD-042005 series diodes provide good power performance for future platform mobile radio and military control circuit switch and attenuator applications for the 1 MHz to 18 GHz operating range. The MA4SPS42x and MA4PD-042005 series devices feature the standard “0402” (40 × 20 mils sq.) style footprint. The products are manufactured using a “Vertical Etch Technology,” which provides lower parasitic CP and LS, while improving the device heat transfer through the silicon cylinder. The MA4SPS42x, 100µm I-region series, offers high peak power (500 W, 1µS pulse width, 0.001 duty cycle) and high average power (10 W) performance, where the 5µm I-region MA4PD-042005 series offers 50 W peak power, 1µS pulse width, 0.001 duty cycle and up to 25 W average power performance. The entire MA4SPS and MA4PD-042005 Surmount PIN diode series are manufactured using M/A-COM’s proprietary HMIC silicon glass process to enable the integration of silicon PIN diodes with a low dispersion, low-loss glass medium to produce either two terminal or multi-port devices.