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Memory Device

Fri, 12/30/2005 - 7:17am

Micron Technology, Inc. introduces a memory device designed for low-density, entry-level mobile handsets. The x16 burst A/D multiplexed pseudo-SRAM (PSRAM) enables a manufacturer’s ability to reduce costs within basic-feature handset designs due to additional features incorporated into an already low-cost CellularRAM™ device. This enhanced CellularRAM device is appropriate for low-cost handsets using new single-chip microprocessors produced by leading controller manufacturers. The x16 burst A/D multiplexed PSRAM features combined address and data pins used for both READ and WRITE functions. With more than a 30% pin count reduction, manufacturers can simplify their controller design resulting in an overall reduced system cost. The device is available in bare die form that enables designers to maximize board space and reduce substrate complexity. Based on DRAM technology, CellularRAM memory is a multigenerational alternative to traditional SRAM. CellularRAM technology, ushered in by Micron, helps meet the increasing memory and bandwidth demands of mobile handset designs, but it can also be used anywhere cache or buffered memory is required. In addition, this device can be used in other mobile applications requiring low power consumption in the personal device, medical, and gaming segments.


Micron Technology, Inc.


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