Mimix Broadband, Inc. announces the release of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two-stage high power amplifier that integrates an on-chip temperature compensated output power detector. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this device covers the 30 to 36 GHz frequency bands and delivers 33 dBm OIP3 and 16 dB small signal gain. The balanced design and Lange couplers help achieve good input and output match. This high power amplifier, identified as XP1017, is well suited for millimeter-wave point-to-point radio, LMDS and Satcom applications. Mimix performs 100% on-wafer RF, DC and output power testing on the XP1017, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Mimix Broadband, Inc.