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Low Noise Gain Block Amplifier

Mon, 10/03/2005 - 9:16am

Mimix Broadband, Inc. introduces a gallium arsenide (GaAs) two stage, low noise gain block amplifier that has a self-biased, single supply design. Using 0.25µm optical etch-stop pseudomorphic high electron mobility transistor (pHEMT) device model technology, the CMM1100 covers the 2 to 18 frequency bands and provides 3.5 dB noise figure and 18 dB gain, delivering 16 dBm P1dB. The device offers a unique combination of low noise figure and broadband output match by employing a unique feedback stage to provide good noise figure that does not exist in typical distributed low noise designs. Integrated bias coils and on-chip DC blocking are all inclusive in the compact chip measuring 1.550 × 1.600 × 0.100 mm.


Mimix Broadband, Inc.


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