CEL announces that NEC has released a low profile M33 that measures 0.64 mm × 0.84 mm × 0.4 mm (including leads) and houses a series of NEC Silicon and Silicon Germanium devices developed specifically for VCO module applications. Available are the NE685M33 and NE851M33 Silicon Bipolars and the NESG2107M33 Silicon Germanium transistor. Designed for wireless handsets and infrastructure applications from 800 MHz to 6.0 GHz, these transistors feature improved frequency stability with low phase noise and low push-pull performance. They also feature low noise figures, high gain at low operating bias and low power consumption. NEC has also made two of its VCO buffer devices available in the same, miniature package: the NE687M33 Silicon Bipolar and the NESG2046M33 Silicon Germanium transistor.