TriQuint Semiconductor announces ten discrete Power pHEMT transistor devices for a variety of amplifier applications including aerospace, digital radio or wireless basestations. These devices, utilizing the company’s 0.35µ power pHEMT production process, offer impressive power, gain and efficiency performance and are suited for L- through Ku-band high power amplifiers. The TGF2021 family offers devices with gate peripheries ranging from 1 to 12 mm and is suited for high power amplifiers up to 12 W through X-band. The TGF2022 family of devices offers gate peripheries from 0.6 mm to 6.0 mm, sizes appropriate for high power amplifiers up to 8 W through Ku band. The pHEMT process allows operating drain voltages to + 12 V for increased power performance and more efficient module DC/DC conversion. Offered in die form, all devices have a protective surface passivation layer, which provides reliability and environmental robustness for both hermetic and non-hermetic applications. All devices are lead-free and RoHS compliant.