Wed, 06/01/2005 - 7:22am
PolarFab announces a family of devices to enhance its BP30 process, a 1.25 μm, 30 V complementary-bipolar (c-bipolar) technology. The devices increase first pass design success rate and reduce design time, while providing reduced die size and power consumption for a range of power management applications up to 30 V including high-performance amplifiers, PWM, buck/boost controllers, linear regulators and switching regulators. The device family includes complementary bipolar NPN and IVPNP devices, SVPNP and LPNP bipolar transistors and Schottky diodes. The devices, optimized for 7, 14 or 20 V, help shrink die size. Additionally, the BP30 process includes an ESD power supply clamp that provides designers with one device that protects all three voltage nodes. A high-sheet resistance (3.2kΩ/sq.) poly resistor and a 20 V, 0.9 fF/μm2 poly nitride capacitor have also been added to PolarFab’s c-bipolar process technology.