Base Station Amplifier
Thu, 05/27/2004 - 1:09pm
Agilent introduces its E-pHEMT (enhancement-mode pseudomorphic high-electron-mobility transistor) field effect transistor (FET), available in a 4.5 × 4.1 × 1.5 mm SOT-89 surface-mount package. The ATF-50189 is designed for use in the transmitter power amplifiers and receiver log-noise amplifiers in cellular and PCS base stations, low-earth-orbit satellite systems, terrestrial multichannel multipoint distribution systems (MMDSs), and other communications applications operating from 450 MHz to 6 GHz. The 45 dBm OIP3 at 2 GHz of the device results in a multichannel amplifier capable of handling a large number of voice and data channels. Its thermal resistance of 29 C/W means that the device can dissipate nearly 2 W at 85° C ambient temperature while maintaining a chip temperature that assures reliability.