Mon, 11/24/2003 - 7:30am
PolarFab has published a datasheet on its BP30 process for 6 inches wafers, a 1.25 micron 30 V junction-isolated process that is suited for high voltage applications. The datasheet outlines the BP30 process, which features an NPN, lateral and substrate vertical PNPs, two implanted resistors, Schottky and buried zener diodes, high-density capacitors, an optional IVPNP module and a choice of one-and two-layer metal process. The datasheet also provides information on the processes' NPNgr device that enables the high Bvceo necessary for power management applications up to 30 V, such as amplifiers, line drivers and other linear applications. A cross-section showing the BP30's integrated devices is included. Also listed in the datasheet is the design support options offered by the company.