Tue, 10/28/2003 - 10:16am
PolarFab introduces features and devices added to its 6 inches wafer PBC4 0.5 micron BCD processes. The devices and options of the PBC4 process include a low threshold voltage option for NMOS devices and high-voltage bipolar (NPN) devices. An asymmetric NMOS device has a low specific on resistance of 59 mΩ/mm2 and is used for 30 V applications. The PBC4 process' 40 V tubbing has extended the range of the process to enable sections of the chip to operate at 40 V while other circuitry operates at low (5 V) and medium (12 V) levels. The process also includes a symmetric isolated high-voltage (30 V) PMOS device.
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