RF Power Transistor
Tue, 10/28/2003 - 10:16am
The MRF5S19060MR1 2 GHz discrete RF power transistor in plastic packaging, is from Motorola. The device is designed to deliver 12 watts of average power when used in N-CDMA amplifier systems at 1.93 to 1.99 GHz. Additional typical 2-carrier N-CDMA performance characteristics of the MRF5S19060MR1 include: gain - 13.5 dB; ACPR - 51 dBc; IM3 - 㪽 dBc; and drain efficiency - 23%. The MRF5S19060M is qualified with an operating junction temperature of 200°C in plastic.