Flash Memory Device
Tue, 10/28/2003 - 10:00am
Micron announces a 64 megabit (Mb) high-performance Flash memory device, MT28F644W18, developed specifically for mobile applications. This 1.8 V core Flash memory device supports an input/output (I/O) voltage of 1.8 V. Micron's flash memory architecture provides a flexible 4Mb multi-partitioned architecture, clock suspend, and fast programming algorithm to meet performance demands for emerging mobile platforms. Micron's Flash Data Management (MFDM) software manages operations and optimizes performance in this multi-bank architecture. The clock suspend feature allows suspension of a burst sequence for the retrieval of data from another device on the same bus while still allowing the burst sequence to resume at a later time with zero initial access latency penalty. The Fast Programming Algorithm feature enables data-stream programming (3.1 μs/word typ.) when the in-factory voltage is set to 12 V (Vpp = 12 V). The same data-stream programming at an in-system voltage of 1.8 V (Vpp = 1.8 V) makes programming and assembly easier. This 64 Mb device is organized as 4 Meg x 16 and available in a FBGA package.