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LDMOS Transistor

Tue, 09/02/2003 - 8:28am

The UGF1011-120J is a high power common source linear pulse LDMOS transistor characterized for a range of operational conditions from short pulse IFF to long pulse JTIDS. The device has a two stage internal input match combined with a single stage internal output match for optimum broadband performance. Typical JTIDS RF performance includes: frequency band is 960 to 1215 MHz; output power is 60 watts; PW is 3.3 mS; Vdd is 30 V; power gain is 14 dB. Typical IFF RF performance includes: frequency band is 1025 to 1150 MHz; output power is 100 watts; PW is 32 us; VDD is 34 V; and power gain is 13 dB.

www.cree.com; (877) 206-5657

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