Tue, 07/08/2003 - 11:09am
PolarFab introduces two devices, which reduce die size and chip costs for its PBC4 0.5-micron BiCMOS-DMOS (BDC) process. The addition of a high power driver with a low specific on resistance (RSP) of 25 Ω mm2 permits the production of smaller die sizes and lower chip costs. The N-channel medium volt DMOS large angle body (MDL) device features a 1.3 μm gate length, a threshold voltage (Vt) of 2.0 V and a maximum operation voltage (Vmax) of 13.2 V.
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