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HBT Amplifiers

Tue, 07/08/2003 - 11:09am

WJ Communications introduces a family of indium gallium phosphide (InGaP) hetero-junction bipolar transistor (HBT) medium power driver amplifiers. These five new amplifiers — AH110, AH115, AH116, AH215 and AH312 — span the 1/4 to 2 watt output power range and are suited for driver amplifiers in wireless infrastructure applications like high power amplifiers in wireless base stations. These InGaP HBT amplifiers have output power levels (P1dB) ranging from 1/4 - 2 watts. These devices deliver high output powers while meeting the system-critical ACPR performance requirements: at any given output power these amplifiers will maintain adjacent and alternate channel power rejection levels. These highly linear amplifiers are capable of running class A/B for better efficiency while covering frequencies from 400 MHz to 2300 MHz. All five models operate directly off a single positive voltage bias and are packaged in low-cost, thermally efficient SMT SOT-89 and SOIC-8 packages.

www.wj.com; (408) 577-6200

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