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Field Effect Transistors

Wed, 07/02/2003 - 9:47am

Toshiba announces a 90-watt C-Band GaAs field effect transistor (FET). The TIM5964-90SL features output power of 49.5 dBm (typical) at a frequency range of 5.9 to 6.4 GHz. Gain (G1dB) is 7 dB typical. Drain current (IDS) is 18.0 A typical. IM3 is – 40 dBc typical at 43.5 dBm S.C.L.

(949) 455-2000; www.chips.toshiba.com

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