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Transistors

Fri, 05/30/2003 - 11:38am

The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 μm × 1500 μm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD1500 is available in die form and in other packages. The FPD1500 is one of several products available from Filtronic , manufactured on the company's 6 inches production line.

www.filcs.com; (408) 988-1331

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