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High Gain Amplifier

Fri, 03/28/2003 - 9:42am

This low noise amplifier (LNA) is dedicated for cellular, DCS, PCS, UMTS and 2.3/2.4 GHz base stations and infrastructure. Configured with Hybrid Pair, Soft Fail architecture and utilizing E-pHEMT transistor technology, this high gain LNA offers a minimum 34 dB gain, gain flatness of ± 0.3 dB maximum, 0.8 dB maximum noise figure at 850 MHz and 1.4 dB maximum noise figure at 1900 MHz over a factory tuned operating bandwidth of 3% from 700 MHz to 2400 MHz. Input/output return loss is specified at 17 dB minimum, reverse isolation 50 dB minimum and output IP3 +42 dBm minimum at 850 MHz, and +41 dBm minimum at 1900 MHz. Operating temperature range is 0 to +65°C.

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