Power GaAs FET
Mon, 01/27/2003 - 9:34am
California Eastern Labs announces the availability of a 10 watt medium power GaAs FET from NEC. With 40 dBm (typical) of output power, the NE650103M is designed to serve as an output stage amplifier in medium power transmitters or as a driver in high power transmitters. P1dB is 40 dBm typical. GL is 11 dB. Power added efficiency is 42%. Thermal resistance is 3.5° C/W.