Advertisement
Product Releases
Advertisement

Trench MOSFETs

Fri, 11/01/2002 - 6:04am

The FDB035AN06A0, FDP038AN06A0, and FDD10AN06A0 are 60 V devices with medium voltage (60 V - 150 V). They target automotive and high power applications. The FDB035AN06A0 features a total gate charge of 124 nC, combined with an ultra-low RDS(on) (3.5 milliohms maximum at room temperature in TO-263). For inductive load switching the device has an unclamped inductive surge (UIS) capability for single and repetitive pulses (625 mJ @ 70 A).

Advertisement

Share this Story

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading