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SiGe LNA Transistor

Wed, 09/11/2002 - 5:17am

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     A low noise figure and excellent linearity make the NESG2101M05 an ideal first stage device for 802.11a W-LAN, CDMA, and OFDM transceiver applications. Its high P1dB makes it an excellent driver output stage in low power transmitters. Its high VCEO rating means it can be operated at voltages up to 5 V. Featured specifications include: high P1dB of 21 dBm @ 2 GHz, 3.6 V, 10mA; low noise of 0.9 dB @ 2 GHz, 2 V, 10mA; and high absolute maximum VCEO is 5 V. The NESG2101M05 is housed in a miniature, low profile, flat lead M05 package.
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