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RF LDMOS Devices

Mon, 05/06/2002 - 7:16am
Motorola announced their next generation of RF LDMOS devices designed specifically for the 3G base station infrastructure market. Motorola's new fifth generation high voltage product family (HV5) continues to support the industry as service providers begin to deploy 3G W-CDMA and UMTS wireless systems. Each device in this family will be optimized for specific frequency bands. Motorola's HV5 family of RF LDMOS devices bring performance to ultra-linear power amplifiers designed for W-CDMA/UMTS applications at 1.9 to 2.1 GHz. The stringent requirements of 3G protocols make device optimization and characterization imperative.

The first HV5 products to be unveiled are the MRF5S21090 and the MRF5P21180. The MRF5S21090 is a 90 watt single-ended device operating at 2.1 GHz. The MRF5S21090 device provides 90 watt peak power and 20 watt average W-CDMA power with a minimum of two-carrier linearity of 㪻 dBc. The MRF5P21180 is a push-pull transistor that provides 180-watt peak power and 38-watt average W-CDMA power with a minimum two-carrier linearity of 㪻 dBc.

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