Fairchild's BGA packaging offers significant size and performance benefits over traditional leaded packaging devices. BGA MOSFETs can dramatically reduce the overall profile of the circuit board with a 0.76mm maximum mounted height, while achieving very low RDS(on). Additionally, BGA packages consume much less board area than equivalent leaded packages, yet have lower profiles than TSSOP-8, Micro8, and SO-8 packages. This advanced packaging allows for topside heat sinking to further improve the package current density.
N-Channel and P-Channel MOSFETs
Mon, 05/06/2002 - 7:16am
Fairchild Semiconductor introduced a total of eleven new MOSFETs. These include single and common-drain dual devices in both N-channel, and P-channel versions. The new parts have breakdown voltage ratings from 20 V to 30 V, maximum RDS(on) ratings from 75 milliohms to 2.9 milliohms, and are gate-drive voltage specified, as low as 2.5 V. The single P-channel products are targeted at a variety of load management applications, while the single N-channel MOSFETs are ideal for DC/DC converter applications as well as load management applications. The dual MOSFET devices are perfectly suited for Li-ion battery pack applications