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GaAs Transistors for Base Station Receiver Designs

Thu, 04/04/2002 - 8:30am
Agilent Technologies announced two additional GaAs transistors available in the company's MiniPak miniature leadless package. These GaAs transistors are targeted at PC card and base station receiver designs. The Agilent MiniPak measures 1.4 mm × 1.2 mm × 0.7 mm.

The 400-micron ATF-551M4 is a single voltage E-pHEMT GaAs FET that does not need a negative gate bias voltage for operation. The device's low noise performance and low power consumption makes it suitable as a LNA for wireless receiver applications in the 2 to 10 GHz frequency range.

The 1600-micron ATF-331M4 is a dual-voltage PHEMT based on Agilent's process. The device's combination of high linearity and low noise figure is optimized for the design of the first or second stage of a base station LNA. Typical performance at 2 GHz (4 V, 60 mA) is 0.6 dB NF, +31 dBm OIP3, +19 dBm P1dB and associated gain (Ga) of 15 dB.

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