The NE722S01 features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance and uniformity. It's housed in NEC's low cost plastic S01 surface mount package and can be ordered in bulk or on tape and reel.
MESFET Delivers Excellent Power Gain
Thu, 02/21/2002 - 5:14am
California Eastern Laboratories (CEL) has announced the availability of a new GaAs MESFET from NEC. Offering excellent medium power performance, the NE722S01 is ideal for use as an oscillator in digital LNBs as well as a second and third stage amplifier in Police Radar Detectors, DBS and other receiver designs from C to X band. Typical performance specifications include a power gain of 6 dB @ 12 GHz, an output power of 15 dB @ 12 GHz @ 1 dB compression, a low noise of 0.9 dB @ 4 GHz and a high gain of 12 dB @ 4 GHz.