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High Power GaAs FET Amplifiers

Wed, 02/27/2002 - 9:34am
OPHIR RF announces the availability of a new family of high power amplifiers covering the frequency range 0.7 - 3.0 GHz. These small, lightweight solid state amplifiers are available with output powers of 10 W, 30 W, 50 W, 100 W and 200 W. This frequency range covers GSM, PCS, DCS and the emerging 3G bands, making the amplifiers suitable for RF device testing and for PIM testing.

GaAsFET technology means that the usable linear power is typically only 0.75 dB below the saturated output power level. For instance, 200 Watts of saturated output power would typically equate to more than 170 Watts of usable power. This makes the high power versions highly suited to the replacement of 1 - 2.5 GHz TWTAs, as the superior linearity means 3 to 5 dB less back off from saturation when compared to a TWTA.

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