Product Releases

GaAs MMIC Receiver

Wed, 02/27/2002 - 9:34am


Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by a single transistor "Tee" attenuator and an image reject fundamental resistive high electron mobility transistor (HEMT) mixer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. Using 0.15 micron gate length GaAs pseudomorphic HEMT (pHEMT) device model technology, this receiver covers the 20 to 32 GHz frequency bands and is well suited to provide minimum distortion for high index modulation schemes.

This receiver, identified as XR1002, has a 12 dB gain control range, typical noise figure of 3 dB, 18 dB typical image rejection across the band and 4 dBm input third order intercept (IIP3). At high signal levels, the radio AGC system can be used to reduce the receiver gain improving the IIP3 providing for minimum distortion at modulation schemes as high as 256 QAM. The XR1002 is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.


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