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MMIC Receiver for High Index Modulation Schemes

Tue, 01/29/2002 - 3:56am

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Mimix Broadband introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by an image reject fundamental resistive high electron mobility transistor (HEMT) mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. Using 0.15 micron gate length GaAs pseudomorphic HEMT (pHEMT) device model technology, this receiver covers the 20 to 32 GHz frequency bands and is well suited to provide minimum distortion for high index modulation schemes.

This receiver, identified as XR1003, has a typical conversion gain of 17 dB with an overall noise figure of 3 dB and 22 dB typical image rejection across the band. The XR1003 is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

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