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SiGe Transistor

Thu, 11/29/2001 - 8:38am

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California Eastern Laboratories (CEL) has announced the availability of a new Silicon Germanium low noise transistor from NEC. Ideal for use as a first stage LNA or oscillator in 1.6, 1.9, 2.4, 3.5, or 5.8 GHz designs, the NESG2030M04 delivers great performance in an ultraminiature package. Specification features (@ 2 GHz) include low noise of 0.9 dB, high associated gain of 16 dB, and 22 dBm of high linearity (IP3).

Fabricated using NEC's new 60 GHz ft Silicon Germanium UHS2 wafer process, the NESG2030M04 is usable in applications to 10 GHz. The NESG2030M04 is housed in NEC's new low profile, flat lead M04 package. Based on the SOT-343 footprint, the M04 is 0.59 mm high and measures 2.0 × 2.05 mm including the leads. The "flat lead" design helps reduce lead inductance for optimal electrical performance.

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