These gallium-arsenide (GaAs) heterojunction-bipolar-transistor (HBT) devices cover the 850 MHz, 1950 MHz and 2150 MHz frequency bands and perform as excellent driver amplifiers for wireless infrastructure equipment. Housed in standard surface-mount SOIC-8 plastic packages with backside metallization, the amplifiers are fabricated using state-of-the-art, high-performance GaAs semiconductor process technology.
Power Amplifier Integrated Circuit
Thu, 11/29/2001 - 8:54am
Sirenza Microdevices expanded its SPA Series of linear power amplifier radio frequency integrated circuits (RFICs) with the addition of two new high-gain models. The SPA-2118 and SPA-2318 offer cellular, PCS and 3G equipment designers 32 dB of gain at 900 MHz and 23 dB of gain at 1.9 and 2.1 GHz, along with exceptional linearity previously unavailable in a single integrated circuit.