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Highly Integrated GaAs MMIC Receiver

Thu, 11/29/2001 - 8:39am

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Mimix Broadband announced the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver, which is comprised of a two stage low noise amplifier (LNA) followed by a pair of sub-harmonic mixers, configured to form an image reject mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband.

Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this receiver, identified as XR1001, covers the 36 to 40 GHz frequency bands. The XR1001 has a typical small signal gain of 5 dB with a typical noise figure of 4 dB and 12 dB typical image rejection across the band. This device is well suited for wireless communications application such as millimeterwave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

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