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GaAs Field Effect Transistor

Thu, 11/29/2001 - 8:38am
Agilent announced that it has introduced the Agilent ATF-541M4, a small, single-voltage E-pHEMT GaAs FET. The Agilent ATF-541M4's miniature leadless package measures 1.4 mm × 1.2 mm × 0.7 mm and takes up 60 percent less board space than the conventional SC-70 package (2.1 mm × 2.0 mm × 0.9 mm). The device's small size, low noise and high linearity makes it highly suitable for tower-mounted amplifiers and front-end LNAs or hybrid modules for GSM/TDMA/CDMA/W-CDMA base stations operating at 900 MHz and 1.9 GHz.

Typical performance at 2 GHz (3 V, 60 mA) is 0.5 dB noise figure, +35.8 dBm OIP3, +21.4 dBm P1dB and 17.5 dB associated gain. At 5.8 GHz (3 V, 60 mA) the numbers are 1.2 dB Fmin, +37.6 dBm OIP3, +19.4 dBm P1dB and 11.9 dB associated gain.

Agilent's E-pHEMT enhancement mode devices are do not need a negative gate bias voltage for operation. They can help simplify the design and reduce the cost of receivers and transmitters in many applications in the 450 MHz to 6 GHz frequency range.

Both the ATF-541M4 and its SC-70-packaged counterpart, ATF-54143, exhibit superior linearity, P1dB and NF performance at higher frequencies, especially notable in the 5 GHz to 6 GHz frequency range. Both can operate effectively as a driver amplifier for 5 GHz 802.11a and HiperLAN/2 Wireless LAN network interface cards. Since they are designed for optimal RF performance at 3 V, they are suitable for operation in PCMCIA-standard PC cards for laptop and handheld computers.

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