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SiGe Heterojunction Bipolar Transistors

Tue, 10/30/2001 - 8:03am
Toshiba introduced a family of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Toshiba's line-up of SiGe-based RFICs will initially include the MT4S100U, a high-frequency transistor, currently offering low noise levels, and a high-power gain transistor, designated the MT4S101U.

Ideal for full-featured cellular phones and other portable wireless devices with wideband-CDMA (W-CDMA) and wireless LAN (WLAN) functionality, SiGe technology significantly reduces the power requirements of the HBT by combining the electrical properties of silicon and germanium to improve system performance.

Toshiba's MT4S100U high frequency transistor utilizes the company's proprietary SiGe Epitaxial Base Bipolar Transistor Process (on wafer transition frequency: fT = 60 GHz) to maintain a VCEO of 3.5 V and achieve low noise levels of NF = 0.7 dB for a 2 GHz silicon-based bipolar transistor. Toshiba also offers the MT4S101U high power gain transistor. Both SiGe HBT devices achieve peak performance using a price competitive silicon substructure and are packaged in a 4-pin surface mount small package USQ.

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