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Medium Power Transistors

Tue, 10/30/2001 - 9:17am
California Eastern Laboratories (CEL) introduces three NPN high frequency, medium power silicon transistors from NEC. Fabricated using NEC's high frequency wafer process, the NE644M04, NE678M04 and NE677M04 are usable in applications from 100 MHz to 3 GHz. Designed to serve as driver amplifiers or as power amplifier stages, these low cost parts are ideal for cellular and cordless phones, pagers, two-way radios and in fixed wireless transceivers. Typical specifications for the NE644M04 at 1.8 GHz include the following: output power is +26 dBm; linear gain is 12 dB; and collector efficiency is 60%. The NE678M04 has the following typical specifications at 1.8 GHz: output power is +18 dBm; linear gain is 13.5 dB; and collector efficiency is 55%. Model NE677M04 exhibits the following typical specifications at 1.8 GHz: output power is +15 dBm; linear gain is 15.5 dB; and collector efficiency is 50%.

All three devices are housed in NEC's 4 pin, flat lead M04 package. The flat lead design helps reduce lead inductance for better electrical performance, plus the leads are recessed into the package resulting in a footprint that measures 2.05 × 2.0 mm (including leads) with a height of 0.59 mm.

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