Product Releases

GaAs pHEMT MMIC Buffer Amplifier

Tue, 10/30/2001 - 8:03am


Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage buffer amplifier. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this gain block amplifier covers the 36 to 43 GHz frequency bands. The MMIC device has a typical small signal gain of 25 dB, in which the gain increases with frequency to compensate for other component roll-off factors common in 38 to 40 GHz systems. This device also has a typical noise figure of 4 dB across the band.

This buffer amplifier, identified as XB1002, can be operated with all four stages biased in parallel, and can be adjusted for low noise or high power performance. The XB1002 is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local


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